Centrotherm Ultra High Temperature Bulk Annealing Furnace
By achieving ultra-high temperature treatment and excellent temperature uniformity, batch processing of boule ingots and wafers is possible, minimizing defects and dislocations.
To improve the yield of wide bandgap semiconductor devices, it is necessary to minimize defects and dislocations caused by stress. One of the methods to achieve this is through ultra-high temperature thermal treatment of semiconductor crystals. The c.CRYSCOO HTA high-temperature annealing furnace has been developed to significantly enhance productivity in the value chain from bulk crystals of wide bandgap semiconductors to devices. With excellent temperature control (maximum temperature of 2200°C), uniformity, and low cross-contamination, the c.CRYSCOO HTA demonstrates superior performance compared to conventional furnaces. It is capable of simultaneously processing more than 10 boule ingots or over 100 unprocessed wafers.
- Company：伯東 本社
- Price：Other
